Numerical Study of an Ultra-Broadband All-Silicon Terahertz Absorber

• Main Authors: Jinfeng Wang, Tingting Lang, Tingting Shen, Changyu Shen, Zhi Hong, Congcong Lu
• Format: Article
• Language: English
• Published: MDPI AG 2020-01-01
• Series: Applied Sciences
• Subjects: broadband absorption; all-silicon terahertz absorber; electric and magnetic resonances
• Online Access: https://www.mdpi.com/2076-3417/10/2/436

In this article we present and numerically investigate a broadband all-silicon terahertz (THz) absorber which consists of a single-layer periodic array of a diamond metamaterial layer placed on a silicon substrate. We simulated the absorption spectra of the absorber under different structural parameters using the commercial software Lumerical FDTD solutions, and analyzed the absorption mechanism from the distribution of the electromagnetic fields. Finally, the absorption for both transverse electric (TE) and transverse magnetic (TM) polarizations under different incident angles from 0 to 70° were investigated. Herein, electric and magnetic resonances are proposed that result in perfect broadband absorption. When the absorber meets the impedance matching principle in accordance with the loss mechanism, it can achieve a nearly perfect absorption response. The diamond absorber exhibits an absorption of ~100% at 1 THz and achieves an absorption efficiency >90% within a bandwidth of 1.3 THz. In addition, owing to the highly structural symmetry, the absorber has a polarization-independent characteristic. Compared with previous metal−dielectric−metal sandwiched absorbers, the all-silicon metamaterial absorbers can avoid the disadvantages of high ohmic losses, low melting points, and high thermal conductivity of the metal, which ensure a promising future for optical applications, including sensors, modulators, and photoelectric detection devices.