Doping effect on the thermoelectric transport properties of HfTe5
We studied the influence of doping HfTe5 with 5% Ti on electric (resistivity and the Hall effect) and thermoelectric transport properties (the Seebeck coefficient, magneto-thermoelectric power, and Nernst effect). The properties of 5% Ti-doped HfTe5 do not change much. Nernst coefficients larger tha...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5127804 |
| Summary: | We studied the influence of doping HfTe5 with 5% Ti on electric (resistivity and the Hall effect) and thermoelectric transport properties (the Seebeck coefficient, magneto-thermoelectric power, and Nernst effect). The properties of 5% Ti-doped HfTe5 do not change much. Nernst coefficients larger than magneto-thermoelectric power were observed in a temperature range near the compensation temperature at which the Seebeck coefficient vanishes. This indicates that a two-carrier conduction model could describe our experimental results. Owing to the high thermoelectric performance, thermopiles were made on a printed circuit board based on doped and undoped HfTe5. A large Seebeck voltage was obtained at room temperature. It became even larger in a low temperature range and presented strong magnetic field dependence. |
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| ISSN: | 2158-3226 |