Comprehensive characterization and analysis of hexagonal boron nitride on sapphire
Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with a strong emphasis on material characterization and...
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doaj-5fcf0cb80a994ee9bbe192c36f66bc912021-06-01T18:31:02ZengAIP Publishing LLCAIP Advances2158-32262021-05-01115055008055008-710.1063/5.0048578Comprehensive characterization and analysis of hexagonal boron nitride on sapphireS. Saha0A. Rice1A. Ghosh2S. M. N. Hasan3W. You4T. Ma5A. Hunter6L. J. Bissell7R. Bedford8M. Crawford9S. Arafin10Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USASandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USAUniversity of Michigan, Ann Arbor, Michigan 48109, USAUniversity of Michigan, Ann Arbor, Michigan 48109, USAMaterials and Manufacturing Directorate, Air Force Research Laboratory, WPennsylvaniaFB, Ohio 45434, USAMaterials and Manufacturing Directorate, Air Force Research Laboratory, WPennsylvaniaFB, Ohio 45434, USASandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USAHexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with a strong emphasis on material characterization and analysis. In particular, structural, morphological, and vibrational properties, and chemical bonding of such van der Waals materials are presented. Between as-grown h-BN and c-plane sapphire, a compressive residual strain induced by both lattice mismatch and thermal expansion mismatch is examined by both theoretical and experimental studies. Atomic force microscopy revealed and scanning electron microscopy supported the presence of wrinkles across the entire surface of the film, likely due to biaxial compressive strain further verified by Raman spectroscopy. Stacking orders in h-BN with a clearly layered structure were confirmed by high resolution transmission electron microscopy, showing that the films have crystallographic homogeneity. Chemical analysis of the as-grown films was done by x-ray photoelectron spectroscopy, which confirmed the formation of stoichiometric h-BN films with excellent uniformity. This wafer-scale chemical vapor deposition-grown layered h-BN with 2D morphology facilitates applications in the fields of quantum- and deep ultraviolet-photonics.http://dx.doi.org/10.1063/5.0048578 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
S. Saha A. Rice A. Ghosh S. M. N. Hasan W. You T. Ma A. Hunter L. J. Bissell R. Bedford M. Crawford S. Arafin |
spellingShingle |
S. Saha A. Rice A. Ghosh S. M. N. Hasan W. You T. Ma A. Hunter L. J. Bissell R. Bedford M. Crawford S. Arafin Comprehensive characterization and analysis of hexagonal boron nitride on sapphire AIP Advances |
author_facet |
S. Saha A. Rice A. Ghosh S. M. N. Hasan W. You T. Ma A. Hunter L. J. Bissell R. Bedford M. Crawford S. Arafin |
author_sort |
S. Saha |
title |
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
title_short |
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
title_full |
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
title_fullStr |
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
title_full_unstemmed |
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
title_sort |
comprehensive characterization and analysis of hexagonal boron nitride on sapphire |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2021-05-01 |
description |
Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with a strong emphasis on material characterization and analysis. In particular, structural, morphological, and vibrational properties, and chemical bonding of such van der Waals materials are presented. Between as-grown h-BN and c-plane sapphire, a compressive residual strain induced by both lattice mismatch and thermal expansion mismatch is examined by both theoretical and experimental studies. Atomic force microscopy revealed and scanning electron microscopy supported the presence of wrinkles across the entire surface of the film, likely due to biaxial compressive strain further verified by Raman spectroscopy. Stacking orders in h-BN with a clearly layered structure were confirmed by high resolution transmission electron microscopy, showing that the films have crystallographic homogeneity. Chemical analysis of the as-grown films was done by x-ray photoelectron spectroscopy, which confirmed the formation of stoichiometric h-BN films with excellent uniformity. This wafer-scale chemical vapor deposition-grown layered h-BN with 2D morphology facilitates applications in the fields of quantum- and deep ultraviolet-photonics. |
url |
http://dx.doi.org/10.1063/5.0048578 |
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