Formation of nanosecond voltage pulse by drift diodes with sharp restoration

• Main Authors: B. V. Ivanov, A. A. Smirnov, S. A. Shevchenko, A. F. Kardo-Sysoev
• Format: Article
• Language: Russian
• Published: Saint Petersburg Electrotechnical University "LETI" 2015-06-01
• Series: Известия высших учебных заведений России: Радиоэлектроника
• Subjects: drift diodes with sharp restoration; voltage nanosecond pulses; switching speed; injection current; lifetime of no equilibrium charge carriers; the pulse pedestal
• Online Access: https://re.eltech.ru/jour/article/view/31
• ISSN: 1993-8985; 2658-4794

Results of an experimental study of switching of silicon drift diodes with sharp restoration (DDSR) in structure of the generator of voltage nanosecond impulses are presented. The working of DDSR in the voltage impulses generator is modeled for a choice of optimum operating modes of the drift diode. Results of numerical calculation showed good coincidence to experiment. Dependences of charge losses from rating current, diode rating duration by electron-hole plasma, and also from charge time of life no equilibrium carriers are presented.