Terahertz lasers based on donor intracenter transitions in silicon
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EDP Sciences
2018-01-01
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Series: | EPJ Web of Conferences |
Online Access: | https://doi.org/10.1051/epjconf/201819502013 |
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doaj-621db01b094247abbba2d28d62bce23b2021-08-02T09:44:50ZengEDP SciencesEPJ Web of Conferences2100-014X2018-01-011950201310.1051/epjconf/201819502013epjconf_tera2018_02013Terahertz lasers based on donor intracenter transitions in siliconShastin V.N.0Institute for Physics of Microstructureshttps://doi.org/10.1051/epjconf/201819502013 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shastin V.N. |
spellingShingle |
Shastin V.N. Terahertz lasers based on donor intracenter transitions in silicon EPJ Web of Conferences |
author_facet |
Shastin V.N. |
author_sort |
Shastin V.N. |
title |
Terahertz lasers based on donor intracenter transitions in silicon |
title_short |
Terahertz lasers based on donor intracenter transitions in silicon |
title_full |
Terahertz lasers based on donor intracenter transitions in silicon |
title_fullStr |
Terahertz lasers based on donor intracenter transitions in silicon |
title_full_unstemmed |
Terahertz lasers based on donor intracenter transitions in silicon |
title_sort |
terahertz lasers based on donor intracenter transitions in silicon |
publisher |
EDP Sciences |
series |
EPJ Web of Conferences |
issn |
2100-014X |
publishDate |
2018-01-01 |
url |
https://doi.org/10.1051/epjconf/201819502013 |
work_keys_str_mv |
AT shastinvn terahertzlasersbasedondonorintracentertransitionsinsilicon |
_version_ |
1721234561279459328 |