Terahertz lasers based on donor intracenter transitions in silicon

Bibliographic Details
Main Author: Shastin V.N.
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:EPJ Web of Conferences
Online Access:https://doi.org/10.1051/epjconf/201819502013
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spelling doaj-621db01b094247abbba2d28d62bce23b2021-08-02T09:44:50ZengEDP SciencesEPJ Web of Conferences2100-014X2018-01-011950201310.1051/epjconf/201819502013epjconf_tera2018_02013Terahertz lasers based on donor intracenter transitions in siliconShastin V.N.0Institute for Physics of Microstructureshttps://doi.org/10.1051/epjconf/201819502013
collection DOAJ
language English
format Article
sources DOAJ
author Shastin V.N.
spellingShingle Shastin V.N.
Terahertz lasers based on donor intracenter transitions in silicon
EPJ Web of Conferences
author_facet Shastin V.N.
author_sort Shastin V.N.
title Terahertz lasers based on donor intracenter transitions in silicon
title_short Terahertz lasers based on donor intracenter transitions in silicon
title_full Terahertz lasers based on donor intracenter transitions in silicon
title_fullStr Terahertz lasers based on donor intracenter transitions in silicon
title_full_unstemmed Terahertz lasers based on donor intracenter transitions in silicon
title_sort terahertz lasers based on donor intracenter transitions in silicon
publisher EDP Sciences
series EPJ Web of Conferences
issn 2100-014X
publishDate 2018-01-01
url https://doi.org/10.1051/epjconf/201819502013
work_keys_str_mv AT shastinvn terahertzlasersbasedondonorintracentertransitionsinsilicon
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