Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2
Abstract The layered dichalcogenide MoS $$_{2}$$ 2 is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS $$_{2}$$ 2 to metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 . With th...
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doaj-622e1a9ab82348c59f77e22d7c2fc6292021-03-28T11:29:45ZengNature Publishing GroupScientific Reports2045-23222021-03-011111710.1038/s41598-021-86364-2Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2Robert Haverkamp0Nomi L. A. N. Sorgenfrei1Erika Giangrisostomi2Stefan Neppl3Danilo Kühn4Alexander Föhlisch5Methods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHMethods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHMethods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHMethods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHMethods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHMethods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHAbstract The layered dichalcogenide MoS $$_{2}$$ 2 is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS $$_{2}$$ 2 to metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 . With the core hole clock approach at the S L $$_{1}$$ 1 X-ray absorption edge we quantify the ultrafast directional charge transfer of excited S3p electrons in-plane ( $$\parallel$$ ‖ ) and out-of-plane ( $$\perp$$ ⊥ ) for 2H-MoS $$_{2}$$ 2 as $$\tau _{2H,\parallel } = 0.38 \pm 0.08$$ τ 2 H , ‖ = 0.38 ± 0.08 fs and $$\tau _{2H,\perp } = 0.33 \pm 0.06$$ τ 2 H , ⊥ = 0.33 ± 0.06 fs and for 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 as $$\tau _{1T,\parallel } = 0.32 \pm 0.12$$ τ 1 T , ‖ = 0.32 ± 0.12 fs and $$\tau _{1T,\perp } = 0.09 \pm 0.07$$ τ 1 T , ⊥ = 0.09 ± 0.07 fs. The isotropic charge delocalization of S3p electrons in the semiconducting 2H phase within the S-Mo-S sheets is assigned to the specific symmetry of the Mo-S bonding arrangement. Formation of 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 by lithiation accelerates the in-plane charge transfer by a factor of $$\sim 1.2$$ ∼ 1.2 due to electron injection to the Mo-S covalent bonds and concomitant structural repositioning of S atoms within the S-Mo-S sheets. For excitation into out-of-plane orbitals, an accelerated charge transfer by a factor of $$\sim 3.7$$ ∼ 3.7 upon lithiation occurs due to S-Li coupling.https://doi.org/10.1038/s41598-021-86364-2 |
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DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Robert Haverkamp Nomi L. A. N. Sorgenfrei Erika Giangrisostomi Stefan Neppl Danilo Kühn Alexander Föhlisch |
spellingShingle |
Robert Haverkamp Nomi L. A. N. Sorgenfrei Erika Giangrisostomi Stefan Neppl Danilo Kühn Alexander Föhlisch Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 Scientific Reports |
author_facet |
Robert Haverkamp Nomi L. A. N. Sorgenfrei Erika Giangrisostomi Stefan Neppl Danilo Kühn Alexander Föhlisch |
author_sort |
Robert Haverkamp |
title |
Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 |
title_short |
Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 |
title_full |
Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 |
title_fullStr |
Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 |
title_full_unstemmed |
Directional charge delocalization dynamics in semiconducting 2H-MoS $$_{2}$$ 2 and metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 |
title_sort |
directional charge delocalization dynamics in semiconducting 2h-mos $$_{2}$$ 2 and metallic 1t-li $$_{\mathrm{x}}$$ x mos $$_{2}$$ 2 |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2021-03-01 |
description |
Abstract The layered dichalcogenide MoS $$_{2}$$ 2 is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS $$_{2}$$ 2 to metallic 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 . With the core hole clock approach at the S L $$_{1}$$ 1 X-ray absorption edge we quantify the ultrafast directional charge transfer of excited S3p electrons in-plane ( $$\parallel$$ ‖ ) and out-of-plane ( $$\perp$$ ⊥ ) for 2H-MoS $$_{2}$$ 2 as $$\tau _{2H,\parallel } = 0.38 \pm 0.08$$ τ 2 H , ‖ = 0.38 ± 0.08 fs and $$\tau _{2H,\perp } = 0.33 \pm 0.06$$ τ 2 H , ⊥ = 0.33 ± 0.06 fs and for 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 as $$\tau _{1T,\parallel } = 0.32 \pm 0.12$$ τ 1 T , ‖ = 0.32 ± 0.12 fs and $$\tau _{1T,\perp } = 0.09 \pm 0.07$$ τ 1 T , ⊥ = 0.09 ± 0.07 fs. The isotropic charge delocalization of S3p electrons in the semiconducting 2H phase within the S-Mo-S sheets is assigned to the specific symmetry of the Mo-S bonding arrangement. Formation of 1T-Li $$_{\mathrm{x}}$$ x MoS $$_{2}$$ 2 by lithiation accelerates the in-plane charge transfer by a factor of $$\sim 1.2$$ ∼ 1.2 due to electron injection to the Mo-S covalent bonds and concomitant structural repositioning of S atoms within the S-Mo-S sheets. For excitation into out-of-plane orbitals, an accelerated charge transfer by a factor of $$\sim 3.7$$ ∼ 3.7 upon lithiation occurs due to S-Li coupling. |
url |
https://doi.org/10.1038/s41598-021-86364-2 |
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