Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnet...

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Main Authors: Leilei Xu, Jiafeng Feng, Kangkang Zhao, Weiming Lv, Xiufeng Han, Zhongyuan Liu, Xiaohong Xu, He Huang, Zhongming Zeng
Format: Article
Language:English
Published: Hindawi Limited 2017-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2017/9042823
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spelling doaj-62743d71ab1f4d3388253040ad6734de2020-11-25T00:47:10ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242017-01-01201710.1155/2017/90428239042823Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve DevicesLeilei Xu0Jiafeng Feng1Kangkang Zhao2Weiming Lv3Xiufeng Han4Zhongyuan Liu5Xiaohong Xu6He Huang7Zhongming Zeng8School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, ChinaSchool of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaTwo-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.http://dx.doi.org/10.1155/2017/9042823
collection DOAJ
language English
format Article
sources DOAJ
author Leilei Xu
Jiafeng Feng
Kangkang Zhao
Weiming Lv
Xiufeng Han
Zhongyuan Liu
Xiaohong Xu
He Huang
Zhongming Zeng
spellingShingle Leilei Xu
Jiafeng Feng
Kangkang Zhao
Weiming Lv
Xiufeng Han
Zhongyuan Liu
Xiaohong Xu
He Huang
Zhongming Zeng
Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
Advances in Condensed Matter Physics
author_facet Leilei Xu
Jiafeng Feng
Kangkang Zhao
Weiming Lv
Xiufeng Han
Zhongyuan Liu
Xiaohong Xu
He Huang
Zhongming Zeng
author_sort Leilei Xu
title Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
title_short Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
title_full Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
title_fullStr Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
title_full_unstemmed Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
title_sort magnetoresistance effect in nife/bp/nife vertical spin valve devices
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2017-01-01
description Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.
url http://dx.doi.org/10.1155/2017/9042823
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AT jiafengfeng magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT kangkangzhao magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT weiminglv magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT xiufenghan magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT zhongyuanliu magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT xiaohongxu magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT hehuang magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
AT zhongmingzeng magnetoresistanceeffectinnifebpnifeverticalspinvalvedevices
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