Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics
Doping effects of CuO on the sintering behavior and electrical properties of 0.94(Bi0.5Na0.5)TiO3–0.06(BaTiO3)–xCuO (BNT–BT6–xCu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the...
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doaj-62aae54a197b492a9859c0d493fa76d12021-06-30T07:16:10ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682021-06-011132140004-12140004-610.1142/S2010135X2140004X10.1142/S2010135X2140004XInfluence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramicsM. Difeo0L. Ramajo1M. Castro2Research Institute of Materials Science and Technology (INTEMA), UNMdP – CONICET Av. Colón 10850, B7606BWV Mar del Plata, ArgentinaResearch Institute of Materials Science and Technology (INTEMA), UNMdP – CONICET Av. Colón 10850, B7606BWV Mar del Plata, ArgentinaResearch Institute of Materials Science and Technology (INTEMA), UNMdP – CONICET Av. Colón 10850, B7606BWV Mar del Plata, ArgentinaDoping effects of CuO on the sintering behavior and electrical properties of 0.94(Bi0.5Na0.5)TiO3–0.06(BaTiO3)–xCuO (BNT–BT6–xCu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the best densification values when it is sintered at 1150∘C, however, the doped system was sintered at 1150∘C, 1100∘C, 1050∘C, 1025∘C, and 975∘C to determine the effect of Cu on the densification process. Therefore, it was obtained that the CuO-doped samples sintered at 1050∘C presented the highest density values and therefore were the ones chosen to perform the characterization tests together with the undoped system. The samples were characterized using X-ray diffraction (XRD), Raman microspectroscopy, and scanning electron microscopy (SEM) analysis, whereas the ferroelectric and dielectric properties were evaluated by means of ferroelectric hysteresis loops and impedance spectroscopy studies. As a result, the addition of CuO allowed an improvement in sinterability and densification, with the subsequent grain growth, and the improvement of the piezoelectric coefficient (d33).http://www.worldscientific.com/doi/epdf/10.1142/S2010135X2140004Xlead-free piezoelectricpiezoelectric propertiessolid-state reactioncuo dopant |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
M. Difeo L. Ramajo M. Castro |
spellingShingle |
M. Difeo L. Ramajo M. Castro Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics Journal of Advanced Dielectrics lead-free piezoelectric piezoelectric properties solid-state reaction cuo dopant |
author_facet |
M. Difeo L. Ramajo M. Castro |
author_sort |
M. Difeo |
title |
Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics |
title_short |
Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics |
title_full |
Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics |
title_fullStr |
Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics |
title_full_unstemmed |
Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics |
title_sort |
influence of cuo addition on dielectric and piezoelectric properties of (bi0.5na0.5)tio3–batio3lead-free piezoceramics |
publisher |
World Scientific Publishing |
series |
Journal of Advanced Dielectrics |
issn |
2010-135X 2010-1368 |
publishDate |
2021-06-01 |
description |
Doping effects of CuO on the sintering behavior and electrical properties of 0.94(Bi0.5Na0.5)TiO3–0.06(BaTiO3)–xCuO (BNT–BT6–xCu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the best densification values when it is sintered at 1150∘C, however, the doped system was sintered at 1150∘C, 1100∘C, 1050∘C, 1025∘C, and 975∘C to determine the effect of Cu on the densification process. Therefore, it was obtained that the CuO-doped samples sintered at 1050∘C presented the highest density values and therefore were the ones chosen to perform the characterization tests together with the undoped system. The samples were characterized using X-ray diffraction (XRD), Raman microspectroscopy, and scanning electron microscopy (SEM) analysis, whereas the ferroelectric and dielectric properties were evaluated by means of ferroelectric hysteresis loops and impedance spectroscopy studies. As a result, the addition of CuO allowed an improvement in sinterability and densification, with the subsequent grain growth, and the improvement of the piezoelectric coefficient (d33). |
topic |
lead-free piezoelectric piezoelectric properties solid-state reaction cuo dopant |
url |
http://www.worldscientific.com/doi/epdf/10.1142/S2010135X2140004X |
work_keys_str_mv |
AT mdifeo influenceofcuoadditionondielectricandpiezoelectricpropertiesofbi05na05tio3batio3leadfreepiezoceramics AT lramajo influenceofcuoadditionondielectricandpiezoelectricpropertiesofbi05na05tio3batio3leadfreepiezoceramics AT mcastro influenceofcuoadditionondielectricandpiezoelectricpropertiesofbi05na05tio3batio3leadfreepiezoceramics |
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