Surface Carrier Dynamics on Semiconductor Studied with Femtosecond Core-Level Photoelectron Spectroscopy Using Extreme Ultraviolet High-Order Harmonic Source

Surface Carrier Dynamics on Semiconductor Studied with Femtosecond Core-Level Photoelectron Spectroscopy Using Extreme Ultraviolet High-Order Harmonic Source

We have used a femtosecond time-resolved core-level surface PES system based on the 92-eV harmonic source to study the surface carrier dynamics that induces the transient SPV on semiconductor surfaces. We clarified the temporal evolution of the transient SPV characterized by the time of the photo-ge...

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Bibliographic Details
Main Authors: Sogawa T., Tateno K., Gotoh H., Nishikawa T., Nakano H., Kato K., Tsunoi T., Oguri K.
Format: Article
Language:English
Published: EDP Sciences 2013-03-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20134104017
Description
Summary:We have used a femtosecond time-resolved core-level surface PES system based on the 92-eV harmonic source to study the surface carrier dynamics that induces the transient SPV on semiconductor surfaces. We clarified the temporal evolution of the transient SPV characterized by the time of the photo-generated carrier separation and recombination. This result demonstrates the potential of this technique for clarifying the initial stage of the surface carrier dynamics after photoexcitation.
ISSN:2100-014X

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