The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of t...

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Main Authors: V. Ya. Degoda, M. Alizadeh, N. O. Kovalenko, N. Yu. Pavlova
Format: Article
Language:English
Published: Hindawi Limited 2018-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2018/1515978
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spelling doaj-63ca27aac9be4891b56049e41a365ae92020-11-24T23:51:49ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/15159781515978The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation IntensityV. Ya. Degoda0M. Alizadeh1N. O. Kovalenko2N. Yu. Pavlova3Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka Street, 01601 Kyiv, UkraineTaras Shevchenko National University of Kyiv, 64 Volodymyrs'ka Street, 01601 Kyiv, UkraineInstitute for Single Crystals NAS of Ukraine, 61001, Nauki Ave, Kharkiv, UkraineNational Pedagogical Dragomanov University, 9 Pyrogova Street, 01601 Kyiv, UkraineThis work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.http://dx.doi.org/10.1155/2018/1515978
collection DOAJ
language English
format Article
sources DOAJ
author V. Ya. Degoda
M. Alizadeh
N. O. Kovalenko
N. Yu. Pavlova
spellingShingle V. Ya. Degoda
M. Alizadeh
N. O. Kovalenko
N. Yu. Pavlova
The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
Advances in Condensed Matter Physics
author_facet V. Ya. Degoda
M. Alizadeh
N. O. Kovalenko
N. Yu. Pavlova
author_sort V. Ya. Degoda
title The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
title_short The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
title_full The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
title_fullStr The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
title_full_unstemmed The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity
title_sort dependencies of x-ray conductivity and x-ray luminescence of znse crystals on the excitation intensity
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2018-01-01
description This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.
url http://dx.doi.org/10.1155/2018/1515978
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