Broadband dielectric response of AlN ceramic composites

• Main Authors: Iryna V. Brodnikovska, Andriy I. Deriy, Vitaly Ya. Petrovsky
• Format: Article
• Language: English
• Published: University of Novi Sad 2014-03-01
• Series: Processing and Application of Ceramics
• Subjects: ceramic substrates; aluminum nitride; hot pressing; dielectric response; polarization
• Online Access: http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2023%2007.pdf

Aluminium nitride (AlN) is considered as a substrate material for microelectronic applications. AlN ceramic composites with different amount of TiO2 (up to 4 vol.%) were obtained using hot pressing at different sintering temperature from 1700 to 1900 °C. It was shown that milling of the raw AlN powder has strongly influence on sintering and improves densification. Broadband dielectric spectroscopy was used as a nondestructive method for monitoring of the ceramic microstructures. TiO2 additive affects the key properties of AlN ceramics. Thus, porosity of 0.1 %, dielectric permeability of σ = 9.7 and dielectric loss tangent of tanδ = 1.3·10-3 can be achieved if up to 2 vol.% TiO2 is added.