Broadband dielectric response of AlN ceramic composites

Aluminium nitride (AlN) is considered as a substrate material for microelectronic applications. AlN ceramic composites with different amount of TiO2 (up to 4 vol.%) were obtained using hot pressing at different sintering temperature from 1700 to 1900 °C. It was shown that milling of the raw AlN powder...

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Bibliographic Details
Main Authors: Iryna V. Brodnikovska, Andriy I. Deriy, Vitaly Ya. Petrovsky
Format: Article
Language:English
Published: University of Novi Sad 2014-03-01
Series:Processing and Application of Ceramics
Subjects:
Online Access:http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2023%2007.pdf