Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure
Summary: Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependen...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-07-01
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| Series: | iScience |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004221007021 |
| id |
doaj-653030ceeef54674bf7fd447e4c87519 |
|---|---|
| record_format |
Article |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Yuanjun Yang Zhenlin Luo Shutong Wang Wenyu Huang Guilin Wang Cangmin Wang Yingxue Yao Hongju Li Zhili Wang Jingtian Zhou Yongqi Dong Yong Guan Yangchao Tian Ce Feng Yonggang Zhao Chen Gao Gang Xiao |
| spellingShingle |
Yuanjun Yang Zhenlin Luo Shutong Wang Wenyu Huang Guilin Wang Cangmin Wang Yingxue Yao Hongju Li Zhili Wang Jingtian Zhou Yongqi Dong Yong Guan Yangchao Tian Ce Feng Yonggang Zhao Chen Gao Gang Xiao Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure iScience magnetism electromagnetic field devices |
| author_facet |
Yuanjun Yang Zhenlin Luo Shutong Wang Wenyu Huang Guilin Wang Cangmin Wang Yingxue Yao Hongju Li Zhili Wang Jingtian Zhou Yongqi Dong Yong Guan Yangchao Tian Ce Feng Yonggang Zhao Chen Gao Gang Xiao |
| author_sort |
Yuanjun Yang |
| title |
Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| title_short |
Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| title_full |
Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| title_fullStr |
Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| title_full_unstemmed |
Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| title_sort |
electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure |
| publisher |
Elsevier |
| series |
iScience |
| issn |
2589-0042 |
| publishDate |
2021-07-01 |
| description |
Summary: Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations. |
| topic |
magnetism electromagnetic field devices |
| url |
http://www.sciencedirect.com/science/article/pii/S2589004221007021 |
| work_keys_str_mv |
AT yuanjunyang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT zhenlinluo electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT shutongwang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT wenyuhuang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT guilinwang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT cangminwang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT yingxueyao electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT hongjuli electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT zhiliwang electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT jingtianzhou electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT yongqidong electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT yongguan electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT yangchaotian electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT cefeng electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT yonggangzhao electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT chengao electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure AT gangxiao electricfieldassistednonvolatilemagneticswitchinginamagnetoelectronichybridstructure |
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doaj-653030ceeef54674bf7fd447e4c875192021-07-23T04:50:22ZengElsevieriScience2589-00422021-07-01247102734Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structureYuanjun Yang0Zhenlin Luo1Shutong Wang2Wenyu Huang3Guilin Wang4Cangmin Wang5Yingxue Yao6Hongju Li7Zhili Wang8Jingtian Zhou9Yongqi Dong10Yong Guan11Yangchao Tian12Ce Feng13Yonggang Zhao14Chen Gao15Gang Xiao16Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China; Corresponding authorNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of ChinaDepartment of Physics, Brown University, Providence, RI 02912, USADepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaDepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaDepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaDepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaDepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaDepartment of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of ChinaDepartment of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of ChinaDepartment of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China; Corresponding authorDepartment of Physics, Brown University, Providence, RI 02912, USA; Corresponding authorSummary: Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.http://www.sciencedirect.com/science/article/pii/S2589004221007021magnetismelectromagnetic fielddevices |