On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1999-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1999/70431 |