Surface Modified TTO Thick Film Resistors for NH3 Gas Sensing
Ti0.8Sn0.2O2-Titanium tin oxide (TTO) compound was prepared by using mechanochemical processing. AR grade TiCl3.2H2O (0.8 M) and SnCl4.5H2O (0.2 M) were mixed followed by calcination and ball milling. As prepared TTO was then used as starting material to fabricate the sensors in thick film form. Thi...
Main Authors: | S.A. PATIL, L.A. PATIL |
---|---|
Format: | Article |
Language: | English |
Published: |
IFSA Publishing, S.L.
2006-09-01
|
Series: | Sensors & Transducers |
Subjects: | |
Online Access: | http://www.sensorsportal.com/HTML/DIGEST/september_06/P_87.pdf |
Similar Items
-
Preparation and Studies on Gas Sensing Performance of Pure and Modified Sn-TiO2 Thick Film Resistor
by: P. D. HIRE, et al.
Published: (2011-02-01) -
Preparation and Study of NH3 Gas Sensing Behavior of Fe2O3 Doped ZnO Thick Film Resistors
by: D. R. Patil, et al.
Published: (2006-08-01) -
Al-doped TiO2 Thick Film Resistors as H2S Gas Sensor
by: Chandrakant DIGHAVKAR, et al.
Published: (2010-12-01) -
LPG and NH3 Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen Printing Technique
by: A. S. GARDE
Published: (2010-11-01) -
Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method
by: R. Y. BORSE, et al.
Published: (2008-10-01)