A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

• Main Authors: Orazio Aiello, Franco Fiori
• Format: Article
• Language: English
• Published: MDPI AG 2013-01-01
• Series: Sensors
• Subjects: current sensor; CMOS integrated circuit; smart power; electromagnetic interference (EMI); electromagnetic compatibility (EMC); senseFET; miller effect
• Online Access: http://www.mdpi.com/1424-8220/13/2/1856

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.