Observation of sub-GeV electrons mirrored by ultrathin crystalline Si
Detailed experimental studies are performed on the mirroring effect for 255-MeV electrons channeled through a 0.74-μm-thick Si crystal at the injector linac of the SAGA-LS facility. For the planar channeling alignment, deflection of the beam by 0.45 mrad is observed with 29% efficiency. The effect i...
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doaj-6964c05679dd45e6b428ef1d12ba4d422020-11-24T22:55:05ZengElsevierPhysics Letters B0370-26931873-24452015-12-01751C45345710.1016/j.physletb.2015.10.079Observation of sub-GeV electrons mirrored by ultrathin crystalline SiY. Takabayashi0Yu.L. Pivovarov1T.A. Tukhfatullin2SAGA Light Source, 8-7 Yayoigaoka, Tosu, Saga 841-0005, JapanNational Research Tomsk Polytechnic University, Tomsk, RussiaNational Research Tomsk Polytechnic University, Tomsk, RussiaDetailed experimental studies are performed on the mirroring effect for 255-MeV electrons channeled through a 0.74-μm-thick Si crystal at the injector linac of the SAGA-LS facility. For the planar channeling alignment, deflection of the beam by 0.45 mrad is observed with 29% efficiency. The effect is explained by computer simulations as a sequence of trajectories of planar-channeled relativistic electrons in an attractive one-dimensional periodic potential of crystallographic planes. Possible applications as a beam splitter are proposed.http://www.sciencedirect.com/science/article/pii/S0370269315008382ChannelingHalf-wavelength crystalMirror reflection |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Y. Takabayashi Yu.L. Pivovarov T.A. Tukhfatullin |
spellingShingle |
Y. Takabayashi Yu.L. Pivovarov T.A. Tukhfatullin Observation of sub-GeV electrons mirrored by ultrathin crystalline Si Physics Letters B Channeling Half-wavelength crystal Mirror reflection |
author_facet |
Y. Takabayashi Yu.L. Pivovarov T.A. Tukhfatullin |
author_sort |
Y. Takabayashi |
title |
Observation of sub-GeV electrons mirrored by ultrathin crystalline Si |
title_short |
Observation of sub-GeV electrons mirrored by ultrathin crystalline Si |
title_full |
Observation of sub-GeV electrons mirrored by ultrathin crystalline Si |
title_fullStr |
Observation of sub-GeV electrons mirrored by ultrathin crystalline Si |
title_full_unstemmed |
Observation of sub-GeV electrons mirrored by ultrathin crystalline Si |
title_sort |
observation of sub-gev electrons mirrored by ultrathin crystalline si |
publisher |
Elsevier |
series |
Physics Letters B |
issn |
0370-2693 1873-2445 |
publishDate |
2015-12-01 |
description |
Detailed experimental studies are performed on the mirroring effect for 255-MeV electrons channeled through a 0.74-μm-thick Si crystal at the injector linac of the SAGA-LS facility. For the planar channeling alignment, deflection of the beam by 0.45 mrad is observed with 29% efficiency. The effect is explained by computer simulations as a sequence of trajectories of planar-channeled relativistic electrons in an attractive one-dimensional periodic potential of crystallographic planes. Possible applications as a beam splitter are proposed. |
topic |
Channeling Half-wavelength crystal Mirror reflection |
url |
http://www.sciencedirect.com/science/article/pii/S0370269315008382 |
work_keys_str_mv |
AT ytakabayashi observationofsubgevelectronsmirroredbyultrathincrystallinesi AT yulpivovarov observationofsubgevelectronsmirroredbyultrathincrystallinesi AT tatukhfatullin observationofsubgevelectronsmirroredbyultrathincrystallinesi |
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1725658048746225664 |