Scattering of Charge Carriers in Thin Films PbTe:Bi
<p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thic...
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Vasyl Stefanyk Precarpathian National University
2019-07-01
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doaj-6ac81a3cefe34258939887bff396938b2020-11-25T01:54:34ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892019-07-0120217117410.15330/pcss.20.2.171-1743217Scattering of Charge Carriers in Thin Films PbTe:BiR. Dzumedzey0Прикарпатський національний університет імені Василя Стефаника<p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio </span><span lang="EN-US">m</span><sub><span lang="EN-US">surf</span></sub><span lang="EN-US">/</span><span lang="EN-US">m</span><sub><span lang="EN-US">bulk</span></sub><span lang="EN-US"> is considered.</span></p>http://journals.pu.if.ua/index.php/pcss/article/view/3868плюмбум телуридлегуваннярозсіювання носіїв зарядурухливість |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
R. Dzumedzey |
spellingShingle |
R. Dzumedzey Scattering of Charge Carriers in Thin Films PbTe:Bi Фізика і хімія твердого тіла плюмбум телурид легування розсіювання носіїв заряду рухливість |
author_facet |
R. Dzumedzey |
author_sort |
R. Dzumedzey |
title |
Scattering of Charge Carriers in Thin Films PbTe:Bi |
title_short |
Scattering of Charge Carriers in Thin Films PbTe:Bi |
title_full |
Scattering of Charge Carriers in Thin Films PbTe:Bi |
title_fullStr |
Scattering of Charge Carriers in Thin Films PbTe:Bi |
title_full_unstemmed |
Scattering of Charge Carriers in Thin Films PbTe:Bi |
title_sort |
scattering of charge carriers in thin films pbte:bi |
publisher |
Vasyl Stefanyk Precarpathian National University |
series |
Фізика і хімія твердого тіла |
issn |
1729-4428 2309-8589 |
publishDate |
2019-07-01 |
description |
<p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio </span><span lang="EN-US">m</span><sub><span lang="EN-US">surf</span></sub><span lang="EN-US">/</span><span lang="EN-US">m</span><sub><span lang="EN-US">bulk</span></sub><span lang="EN-US"> is considered.</span></p> |
topic |
плюмбум телурид легування розсіювання носіїв заряду рухливість |
url |
http://journals.pu.if.ua/index.php/pcss/article/view/3868 |
work_keys_str_mv |
AT rdzumedzey scatteringofchargecarriersinthinfilmspbtebi |
_version_ |
1724986593226260480 |