Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °C. The ohmic behavior was reached...

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Bibliographic Details
Main Authors: Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Energies
Subjects:
AlGaN/GaN
ohmic contacts
barrier height
Ti/Al/Ti
Ta/Al/Ta
Online Access:https://www.mdpi.com/1996-1073/12/14/2655

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