DIRECT TUNNELLING AND MOSFET BORDER TRAPS
The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementat...
Main Author: | Vladimir Drach |
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Format: | Article |
Language: | English |
Published: |
Science and Innovation Center Publishing House
2015-09-01
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Series: | International Journal of Advanced Studies |
Subjects: | |
Online Access: | http://journal-s.org/index.php/ijas/article/view/8532 |
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