The current state of studies of the optical properties of semiconductive materials
It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new qua...
Main Author: | |
---|---|
Format: | Article |
Language: | English |
Published: |
PC Technology Center
2014-12-01
|
Series: | Tehnologìčnij Audit ta Rezervi Virobnictva |
Subjects: | |
Online Access: | http://journals.uran.ua/tarp/article/view/34756 |
id |
doaj-6edf48ca6b9f44e29f955219f09d43fa |
---|---|
record_format |
Article |
spelling |
doaj-6edf48ca6b9f44e29f955219f09d43fa2020-11-25T01:31:00ZengPC Technology CenterTehnologìčnij Audit ta Rezervi Virobnictva2226-37802312-83722014-12-0161(20)687210.15587/2312-8372.2014.3475634756The current state of studies of the optical properties of semiconductive materialsВячеслав Віталійович Федотов0National Technical University of Ukraine "Kyiv Polytechnic Institute", Pobedy ave. 37, Kyiv, Ukraine, 03056It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new quantum electronics devices. As a result of this analysis it was found the major dependence of refraction, absorption and reflection from radiation wavelength. The dependence between the intensity of the incident beam and the intensity of output (such reflected or passing through a semiconductor) beam with consideration of absorption (reflection) of the material is determined. In results of absorption coefficient study of the material on free charge carriers it is appeared that it depends not only on the wavelength and refractive index, but also on factors such as the electron density and mobility of charge carriers.http://journals.uran.ua/tarp/article/view/34756semiconductoroptical propertiesphotonoptical band gaprefractive index |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Вячеслав Віталійович Федотов |
spellingShingle |
Вячеслав Віталійович Федотов The current state of studies of the optical properties of semiconductive materials Tehnologìčnij Audit ta Rezervi Virobnictva semiconductor optical properties photon optical band gap refractive index |
author_facet |
Вячеслав Віталійович Федотов |
author_sort |
Вячеслав Віталійович Федотов |
title |
The current state of studies of the optical properties of semiconductive materials |
title_short |
The current state of studies of the optical properties of semiconductive materials |
title_full |
The current state of studies of the optical properties of semiconductive materials |
title_fullStr |
The current state of studies of the optical properties of semiconductive materials |
title_full_unstemmed |
The current state of studies of the optical properties of semiconductive materials |
title_sort |
current state of studies of the optical properties of semiconductive materials |
publisher |
PC Technology Center |
series |
Tehnologìčnij Audit ta Rezervi Virobnictva |
issn |
2226-3780 2312-8372 |
publishDate |
2014-12-01 |
description |
It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new quantum electronics devices. As a result of this analysis it was found the major dependence of refraction, absorption and reflection from radiation wavelength.
The dependence between the intensity of the incident beam and the intensity of output (such reflected or passing through a semiconductor) beam with consideration of absorption (reflection) of the material is determined.
In results of absorption coefficient study of the material on free charge carriers it is appeared that it depends not only on the wavelength and refractive index, but also on factors such as the electron density and mobility of charge carriers. |
topic |
semiconductor optical properties photon optical band gap refractive index |
url |
http://journals.uran.ua/tarp/article/view/34756 |
work_keys_str_mv |
AT vâčeslavvítalíjovičfedotov thecurrentstateofstudiesoftheopticalpropertiesofsemiconductivematerials AT vâčeslavvítalíjovičfedotov currentstateofstudiesoftheopticalpropertiesofsemiconductivematerials |
_version_ |
1725088363424251904 |