The current state of studies of the optical properties of semiconductive materials

It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new qua...

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Main Author: Вячеслав Віталійович Федотов
Format: Article
Language:English
Published: PC Technology Center 2014-12-01
Series:Tehnologìčnij Audit ta Rezervi Virobnictva
Subjects:
Online Access:http://journals.uran.ua/tarp/article/view/34756
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spelling doaj-6edf48ca6b9f44e29f955219f09d43fa2020-11-25T01:31:00ZengPC Technology CenterTehnologìčnij Audit ta Rezervi Virobnictva2226-37802312-83722014-12-0161(20)687210.15587/2312-8372.2014.3475634756The current state of studies of the optical properties of semiconductive materialsВячеслав Віталійович Федотов0National Technical University of Ukraine "Kyiv Polytechnic Institute", Pobedy ave. 37, Kyiv, Ukraine, 03056It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new quantum electronics devices. As a result of this analysis it was found the major dependence of refraction, absorption and reflection from radiation wavelength. The dependence between the intensity of the incident beam and the intensity of output (such reflected or passing through a semiconductor) beam with consideration of absorption (reflection) of the material is determined. In results of absorption coefficient study of the material on free charge carriers it is appeared that it depends not only on the wavelength and refractive index, but also on factors such as the electron density and mobility of charge carriers.http://journals.uran.ua/tarp/article/view/34756semiconductoroptical propertiesphotonoptical band gaprefractive index
collection DOAJ
language English
format Article
sources DOAJ
author Вячеслав Віталійович Федотов
spellingShingle Вячеслав Віталійович Федотов
The current state of studies of the optical properties of semiconductive materials
Tehnologìčnij Audit ta Rezervi Virobnictva
semiconductor
optical properties
photon
optical band gap
refractive index
author_facet Вячеслав Віталійович Федотов
author_sort Вячеслав Віталійович Федотов
title The current state of studies of the optical properties of semiconductive materials
title_short The current state of studies of the optical properties of semiconductive materials
title_full The current state of studies of the optical properties of semiconductive materials
title_fullStr The current state of studies of the optical properties of semiconductive materials
title_full_unstemmed The current state of studies of the optical properties of semiconductive materials
title_sort current state of studies of the optical properties of semiconductive materials
publisher PC Technology Center
series Tehnologìčnij Audit ta Rezervi Virobnictva
issn 2226-3780
2312-8372
publishDate 2014-12-01
description It is analyzed the optical properties of semiconductors due to the fact that the research of nonlinear optical effects in semiconductors is increased an interest, both in terms of basic science as well as in terms of the huge prospects for practical use of research results in the creation of new quantum electronics devices. As a result of this analysis it was found the major dependence of refraction, absorption and reflection from radiation wavelength. The dependence between the intensity of the incident beam and the intensity of output (such reflected or passing through a semiconductor) beam with consideration of absorption (reflection) of the material is determined. In results of absorption coefficient study of the material on free charge carriers it is appeared that it depends not only on the wavelength and refractive index, but also on factors such as the electron density and mobility of charge carriers.
topic semiconductor
optical properties
photon
optical band gap
refractive index
url http://journals.uran.ua/tarp/article/view/34756
work_keys_str_mv AT vâčeslavvítalíjovičfedotov thecurrentstateofstudiesoftheopticalpropertiesofsemiconductivematerials
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