Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Abstract High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a...
Main Authors: | Lulu Chou, Yan Liu, Yang Xu, Yue Peng, Huan Liu, Xiao Yu, Genquan Han, Yue Hao |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2021-08-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | https://doi.org/10.1186/s11671-021-03577-0 |
Similar Items
-
High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing
by: Huan Liu, et al.
Published: (2019-06-01) -
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
by: Huan Liu, et al.
Published: (2020-05-01) -
High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
by: Huan Liu, et al.
Published: (2019-01-01) -
SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW
by: ARNOLD, MARTIN KEITH, JR.
Published: (2007) -
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
by: Siqing Zhang, et al.
Published: (2021-02-01)