Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts

Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts

One of the main reasons that the emission efficiency of GaN-based light-emitting diodes (LEDs) decreases significantly as the emission wavelength shorter than 300 nm is the low light extraction efficiency (LEE). Especially in deep ultra-violet (DUV) LEDs, light propagating outside the escape cone an...

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Bibliographic Details
Main Authors: Shiou-Yi Kuo, Chia-Jui Chang, Zhen-Ting Huang, Tien-Chang Lu
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Applied Sciences
Subjects:
LED
DUV
LEE
ITO
Online Access:https://www.mdpi.com/2076-3417/10/17/5783

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