Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2...

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Bibliographic Details
Main Authors: Fu-Long Sun, Zhi-Quan Liu, Cai-Fu Li, Qing-Sheng Zhu, Hao Zhang, Katsuaki Suganuma
Format: Article
Language:English
Published: MDPI AG 2018-02-01
Series:Materials
Subjects:
large-scale electrodeposition
nanotwinned copper
through silicon via
gelatin adsorption
Online Access:http://www.mdpi.com/1996-1944/11/2/319

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http://www.mdpi.com/1996-1944/11/2/319

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