Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via
This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-02-01
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Series: | Materials |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1944/11/2/319 |