Optimizing the Properties of InGaZnO_x Thin Film Transistors by Adjusting the Adsorbed Degree of Cs⁺ Ions

• Main Authors: He Zhang, Yaogong Wang, Ruozheng Wang, Xiaoning Zhang, Chunliang Liu
• Format: Article
• Language: English
• Published: MDPI AG 2019-07-01
• Series: Materials
• Subjects: low-temperature fabrication; ions adsorption; IGZO TFTs; device performance
• Online Access: https://www.mdpi.com/1996-1944/12/14/2300
• ISSN: 1996-1944

To improve the performance of amorphous InGaZnO_x (a-IGZO) thin film transistors (TFTs), in this thesis, Cs⁺ ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs⁺ ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs⁺ ion concentrations were investigated in our work. When the Cs⁺ ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm² V^−1 s^−1, the OFF current of 0.8 × 10^−10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s.