Optimizing the Properties of InGaZnO<sub>x</sub> Thin Film Transistors by Adjusting the Adsorbed Degree of Cs<sup>+</sup> Ions

Optimizing the Properties of InGaZnO<sub>x</sub> Thin Film Transistors by Adjusting the Adsorbed Degree of Cs<sup>+</sup> Ions

To improve the performance of amorphous InGaZnO<sub>x</sub> (a-IGZO) thin film transistors (TFTs), in this thesis, Cs<sup>+</sup> ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structu...

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Bibliographic Details
Main Authors: He Zhang, Yaogong Wang, Ruozheng Wang, Xiaoning Zhang, Chunliang Liu
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Materials
Subjects:
low-temperature fabrication
ions adsorption
IGZO TFTs
device performance
Online Access:https://www.mdpi.com/1996-1944/12/14/2300

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https://www.mdpi.com/1996-1944/12/14/2300

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