Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device
In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical inf...
Main Authors: | Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-01-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/2/315 |
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