Some Results on PIN and ITO Photodiodes
In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a l...
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1993-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1993/60126 |
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doaj-741df9aab6bb466fa039b45fef6fe20b2020-11-25T00:47:25ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311993-01-01152757810.1155/1993/60126Some Results on PIN and ITO PhotodiodesM. A. Grado CaffaroM. Grado CaffaroIn this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a layer n-type GaAs is examined. An ITO-HEMT is also considered.http://dx.doi.org/10.1155/1993/60126 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
M. A. Grado Caffaro M. Grado Caffaro |
spellingShingle |
M. A. Grado Caffaro M. Grado Caffaro Some Results on PIN and ITO Photodiodes Active and Passive Electronic Components |
author_facet |
M. A. Grado Caffaro M. Grado Caffaro |
author_sort |
M. A. Grado Caffaro |
title |
Some Results on PIN and ITO Photodiodes |
title_short |
Some Results on PIN and ITO Photodiodes |
title_full |
Some Results on PIN and ITO Photodiodes |
title_fullStr |
Some Results on PIN and ITO Photodiodes |
title_full_unstemmed |
Some Results on PIN and ITO Photodiodes |
title_sort |
some results on pin and ito photodiodes |
publisher |
Hindawi Limited |
series |
Active and Passive Electronic Components |
issn |
0882-7516 1563-5031 |
publishDate |
1993-01-01 |
description |
In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are
reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode
are performed and compared to experimental considerations. In addition, an ITO structure on
a layer n-type GaAs is examined. An ITO-HEMT is also considered. |
url |
http://dx.doi.org/10.1155/1993/60126 |
work_keys_str_mv |
AT magradocaffaro someresultsonpinanditophotodiodes AT mgradocaffaro someresultsonpinanditophotodiodes |
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1725260002137997312 |