Some Results on PIN and ITO Photodiodes

In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a l...

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Main Authors: M. A. Grado Caffaro, M. Grado Caffaro
Format: Article
Language:English
Published: Hindawi Limited 1993-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1993/60126
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spelling doaj-741df9aab6bb466fa039b45fef6fe20b2020-11-25T00:47:25ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311993-01-01152757810.1155/1993/60126Some Results on PIN and ITO PhotodiodesM. A. Grado CaffaroM. Grado CaffaroIn this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a layer n-type GaAs is examined. An ITO-HEMT is also considered.http://dx.doi.org/10.1155/1993/60126
collection DOAJ
language English
format Article
sources DOAJ
author M. A. Grado Caffaro
M. Grado Caffaro
spellingShingle M. A. Grado Caffaro
M. Grado Caffaro
Some Results on PIN and ITO Photodiodes
Active and Passive Electronic Components
author_facet M. A. Grado Caffaro
M. Grado Caffaro
author_sort M. A. Grado Caffaro
title Some Results on PIN and ITO Photodiodes
title_short Some Results on PIN and ITO Photodiodes
title_full Some Results on PIN and ITO Photodiodes
title_fullStr Some Results on PIN and ITO Photodiodes
title_full_unstemmed Some Results on PIN and ITO Photodiodes
title_sort some results on pin and ito photodiodes
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 1993-01-01
description In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a layer n-type GaAs is examined. An ITO-HEMT is also considered.
url http://dx.doi.org/10.1155/1993/60126
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