Significant Enhancement of Piezoelectric Response in AlN by Yb Addition
This study employs first-principles calculations to investigate how introducing Yb into aluminum nitride (AlN) leads to a<b> </b>large enhancement in the material’s piezoelectric response (<i>d</i><sub>33</sub>). The maximum <i>d</i><sub>33</s...
Main Authors: | Kenji Hirata, Yuto Mori, Hiroshi Yamada, Masato Uehara, Sri Ayu Anggraini, Morito Akiyama |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-01-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/14/2/309 |
Similar Items
-
Integrated Piezoelectric AlN Thin Film with SU-8/PDMS Supporting Layer for Flexible Sensor Array
by: Hong Goo Yeo, et al.
Published: (2020-01-01) -
Large piezoelectricity response in Li and Ti (or Zr) co-alloyed w-AlN
by: Guo, Y., et al.
Published: (2022) -
Synthesis of thin piezoelectric ALN films in view of sensors and telecom applications = Síntese de filmes finos de ALN piezoelétrico para aplicações em sensores e dispositivos de alta frequência
by: Moreira, Milena de Albuquerque, 1977-
Published: (2014) -
Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations
by: Han Yan, et al.
Published: (2018-01-01) -
Coexistence of large out-of-plane and in-plane piezoelectricity in 2D monolayer Li-based ternary chalcogenides LiMX2
by: Siyuan Liu, et al.
Published: (2021-07-01)