Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect

This paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural...

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Main Authors: Michael Haub, Sebastian Hummel, Martin Bogner, Hermann Sandmaier
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Proceedings
Subjects:
Online Access:https://www.mdpi.com/2504-3900/2/13/1045
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spelling doaj-75426be8126742dda9f17824ac121f872020-11-24T20:53:34ZengMDPI AGProceedings2504-39002018-11-01213104510.3390/proceedings2131045proceedings2131045Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling EffectMichael Haub0Sebastian Hummel1Martin Bogner2Hermann Sandmaier3Chair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyThis paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural frequency with a nominal acceleration of +/−1 g corresponding to a deflection of +/−9.36 Å. The poly-silicon (PolySi) sensor structure with a size (L × W) of 98 µm × 85 µm is designed in a way that the main displacement operates just in one direction. To lead the sensor into operational conditions, control a constant distance between the tunneling electrodes and perform self-test actuations two electrodes are placed below the sensor structure. The tunneling tip is deposited by a focused ion beam (FIB) to provide the tunneling section with a third pad on the substrate. Within this paper the focus is on the functional implementation of the structure, the investigation of the electrostatic actuators and the deposition of the tunneling tip by the FIB.https://www.mdpi.com/2504-3900/2/13/1045accelerometertunneling effectmicrosensorselectrostaticfocused ion beam
collection DOAJ
language English
format Article
sources DOAJ
author Michael Haub
Sebastian Hummel
Martin Bogner
Hermann Sandmaier
spellingShingle Michael Haub
Sebastian Hummel
Martin Bogner
Hermann Sandmaier
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
Proceedings
accelerometer
tunneling effect
microsensors
electrostatic
focused ion beam
author_facet Michael Haub
Sebastian Hummel
Martin Bogner
Hermann Sandmaier
author_sort Michael Haub
title Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
title_short Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
title_full Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
title_fullStr Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
title_full_unstemmed Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
title_sort novel design of an extremely miniaturized accelerometer based on quantum tunneling effect
publisher MDPI AG
series Proceedings
issn 2504-3900
publishDate 2018-11-01
description This paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural frequency with a nominal acceleration of +/−1 g corresponding to a deflection of +/−9.36 Å. The poly-silicon (PolySi) sensor structure with a size (L × W) of 98 µm × 85 µm is designed in a way that the main displacement operates just in one direction. To lead the sensor into operational conditions, control a constant distance between the tunneling electrodes and perform self-test actuations two electrodes are placed below the sensor structure. The tunneling tip is deposited by a focused ion beam (FIB) to provide the tunneling section with a third pad on the substrate. Within this paper the focus is on the functional implementation of the structure, the investigation of the electrostatic actuators and the deposition of the tunneling tip by the FIB.
topic accelerometer
tunneling effect
microsensors
electrostatic
focused ion beam
url https://www.mdpi.com/2504-3900/2/13/1045
work_keys_str_mv AT michaelhaub noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect
AT sebastianhummel noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect
AT martinbogner noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect
AT hermannsandmaier noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect
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