Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films

Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their element...

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Main Authors:	Teodor Huminiuc, Oliver Whear, Andrew J. Vick, David C. Lloyd, Gonzalo Vallejo-Fernandez, Kevin O’Grady, Atsufumi Hirohata
Format:	Article
Language:	English
Published:	MDPI AG 2021-09-01
Series:	Magnetochemistry
Subjects:	antiferromagnets Heusler alloys exchange bias blocking temperature spintronic devices
Online Access:	https://www.mdpi.com/2312-7481/7/9/127

id	doaj-75ff0d9b8f3a4c0fbad6df4a451e07f1
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spelling	doaj-75ff0d9b8f3a4c0fbad6df4a451e07f12021-09-26T00:35:13ZengMDPI AGMagnetochemistry2312-74812021-09-01712712710.3390/magnetochemistry7090127Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy FilmsTeodor Huminiuc0Oliver Whear1Andrew J. Vick2David C. Lloyd3Gonzalo Vallejo-Fernandez4Kevin O’Grady5Atsufumi Hirohata6Department of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Electronic Engineering, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Electronic Engineering, University of York, Heslington, York YO10 5DD, UKRecent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni<sub>2</sub>MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.https://www.mdpi.com/2312-7481/7/9/127antiferromagnetsHeusler alloysexchange biasblocking temperaturespintronic devices
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata
spellingShingle	Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films Magnetochemistry antiferromagnets Heusler alloys exchange bias blocking temperature spintronic devices
author_facet	Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata
author_sort	Teodor Huminiuc
title	Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
title_short	Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
title_full	Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
title_fullStr	Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
title_full_unstemmed	Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
title_sort	growth and characterisation of antiferromagnetic ni<sub>2</sub>mnal heusler alloy films
publisher	MDPI AG
series	Magnetochemistry
issn	2312-7481
publishDate	2021-09-01
description	Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni<sub>2</sub>MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.
topic	antiferromagnets Heusler alloys exchange bias blocking temperature spintronic devices
url	https://www.mdpi.com/2312-7481/7/9/127
work_keys_str_mv	AT teodorhuminiuc growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT oliverwhear growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT andrewjvick growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT davidclloyd growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT gonzalovallejofernandez growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT kevinogrady growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT atsufumihirohata growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms
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Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films

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