Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films
Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their element...
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doaj-75ff0d9b8f3a4c0fbad6df4a451e07f12021-09-26T00:35:13ZengMDPI AGMagnetochemistry2312-74812021-09-01712712710.3390/magnetochemistry7090127Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy FilmsTeodor Huminiuc0Oliver Whear1Andrew J. Vick2David C. Lloyd3Gonzalo Vallejo-Fernandez4Kevin O’Grady5Atsufumi Hirohata6Department of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Electronic Engineering, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Physics, University of York, Heslington, York YO10 5DD, UKDepartment of Electronic Engineering, University of York, Heslington, York YO10 5DD, UKRecent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni<sub>2</sub>MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.https://www.mdpi.com/2312-7481/7/9/127antiferromagnetsHeusler alloysexchange biasblocking temperaturespintronic devices |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata |
spellingShingle |
Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films Magnetochemistry antiferromagnets Heusler alloys exchange bias blocking temperature spintronic devices |
author_facet |
Teodor Huminiuc Oliver Whear Andrew J. Vick David C. Lloyd Gonzalo Vallejo-Fernandez Kevin O’Grady Atsufumi Hirohata |
author_sort |
Teodor Huminiuc |
title |
Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films |
title_short |
Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films |
title_full |
Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films |
title_fullStr |
Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films |
title_full_unstemmed |
Growth and Characterisation of Antiferromagnetic Ni<sub>2</sub>MnAl Heusler Alloy Films |
title_sort |
growth and characterisation of antiferromagnetic ni<sub>2</sub>mnal heusler alloy films |
publisher |
MDPI AG |
series |
Magnetochemistry |
issn |
2312-7481 |
publishDate |
2021-09-01 |
description |
Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni<sub>2</sub>MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications. |
topic |
antiferromagnets Heusler alloys exchange bias blocking temperature spintronic devices |
url |
https://www.mdpi.com/2312-7481/7/9/127 |
work_keys_str_mv |
AT teodorhuminiuc growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT oliverwhear growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT andrewjvick growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT davidclloyd growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT gonzalovallejofernandez growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT kevinogrady growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms AT atsufumihirohata growthandcharacterisationofantiferromagneticnisub2submnalheusleralloyfilms |
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1716870347950653440 |