High-current operation of vertical-type organic transistor with preferentially oriented molecular film

High-current operation of vertical-type organic transistor with preferentially oriented molecular film

A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π–π stacking direction...

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Main Authors: Hirohiko Fukagawa, Yasuyuki Watanabe, Kazuhiro Kudo, Jun-ichi Nishida, Yoshiro Yamashita, Hideo Fujikake, Shizuo Tokito, Toshihiro Yamamoto
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4947203
id doaj-76bad1cf3afc4b5f9a52eccea4bb849c
record_format Article
spelling doaj-76bad1cf3afc4b5f9a52eccea4bb849c2020-11-24T21:35:07ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045010045010-610.1063/1.4947203040604ADVHigh-current operation of vertical-type organic transistor with preferentially oriented molecular filmHirohiko Fukagawa0Yasuyuki Watanabe1Kazuhiro Kudo2Jun-ichi Nishida3Yoshiro Yamashita4Hideo Fujikake5Shizuo Tokito6Toshihiro Yamamoto7NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanCenter for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanGraduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanDepartment of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, JapanDepartment of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, JapanNHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanNHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanNHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanA high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π–π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm−2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.http://dx.doi.org/10.1063/1.4947203
collection DOAJ
language English
format Article
sources DOAJ
author Hirohiko Fukagawa
Yasuyuki Watanabe
Kazuhiro Kudo
Jun-ichi Nishida
Yoshiro Yamashita
Hideo Fujikake
Shizuo Tokito
Toshihiro Yamamoto
spellingShingle Hirohiko Fukagawa
Yasuyuki Watanabe
Kazuhiro Kudo
Jun-ichi Nishida
Yoshiro Yamashita
Hideo Fujikake
Shizuo Tokito
Toshihiro Yamamoto
High-current operation of vertical-type organic transistor with preferentially oriented molecular film
AIP Advances
author_facet Hirohiko Fukagawa
Yasuyuki Watanabe
Kazuhiro Kudo
Jun-ichi Nishida
Yoshiro Yamashita
Hideo Fujikake
Shizuo Tokito
Toshihiro Yamamoto
author_sort Hirohiko Fukagawa
title High-current operation of vertical-type organic transistor with preferentially oriented molecular film
title_short High-current operation of vertical-type organic transistor with preferentially oriented molecular film
title_full High-current operation of vertical-type organic transistor with preferentially oriented molecular film
title_fullStr High-current operation of vertical-type organic transistor with preferentially oriented molecular film
title_full_unstemmed High-current operation of vertical-type organic transistor with preferentially oriented molecular film
title_sort high-current operation of vertical-type organic transistor with preferentially oriented molecular film
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-04-01
description A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π–π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm−2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.
url http://dx.doi.org/10.1063/1.4947203
work_keys_str_mv AT hirohikofukagawa highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT yasuyukiwatanabe highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT kazuhirokudo highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT junichinishida highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT yoshiroyamashita highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT hideofujikake highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT shizuotokito highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
AT toshihiroyamamoto highcurrentoperationofverticaltypeorganictransistorwithpreferentiallyorientedmolecularfilm
_version_ 1725946547685818368

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