The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

• Main Authors: Lin Shang, Bingshe Xu, Shufang Ma, Qingming Liu, Huican Ouyang, Hengsheng Shan, Xiaodong Hao, Bin Han
• Format: Article
• Language: English
• Published: MDPI AG 2021-02-01
• Series: Coatings
• Subjects: GaN; annealing time; nucleation island; dislocation
• Online Access: https://www.mdpi.com/2079-6412/11/2/188

The surface morphology evolution of GaN nucleation layer (NL) after different annealing time has been investigated by atomic force microscope. The surface morphologies of GaN NL after different annealing time are island-like. It is observed that for 0-min annealing time sample nucleation islands (NIs) are high density and small in size which results in high dislocation density GaN films, while the samples with longer annealing time have low density and large size NIs which results in low dislocation density GaN films. The crystal structure of GaN NLs after different annealing time investigated by high-resolution X-ray diffraction indicates GaN NL is polycrystalline. During annealing, GaN nanocrystals misaligned with sapphire gradually disappear and GaN nanocrystals aligned with sapphire survive and grow up. Thus, the GaN NL surface has different NIs’ densities and sizes after different annealing time. The NL annealing time can effectively control the density and size of the NIs and further determine the GaN films crystal quality.