Removal Characteristics of Sapphire Lapping using Composite Plates with Consciously Patterned Resinoid-Bonded Semifixed Diamond Grits
Sapphire lapping is of key importance for the successful planarization of wafers that are widely present in electronic devices. However, the high hardness of sapphire makes it extremely challenging to improve its material removal rate during the lapping process without compromising surface quality a...
Main Authors: | Wenshan Wang, Yiqing Yu, Zhongwei Hu, Congfu Fang, Jing Lu, Xipeng Xu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-04-01
|
Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/10/4/293 |
Similar Items
-
Evaluation of Double-Sided Planetary Grinding Using Diamond Wheels for Sapphire Substrates
by: Lijuan Wang, et al.
Published: (2018-06-01) -
Thermal modeling of GaN HEMTs on sapphire and diamond
by: Salm, Roman Peter.
Published: (2012) -
Examination of the Material Removal Rate in Lapping Polycrystalline Diamond Compacts
by: Sowers, Jason Michael
Published: (2012) -
Effect of the Lapping Platen Groove Density on the Characteristics of Microabrasive-Based Lapping
by: Taekyung Lee, et al.
Published: (2020-08-01) -
High Strength Bonding of Sapphire
by: Fiore, Daniel F
Published: (2002)