Effect of temperature on dielectric response in X-band of silicon nitride ceramics prepared by gelcasting

• Main Authors: Shiyu Shao, Heng Luo, Lianwen Deng, Jun He, Shengxiang Huang
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2018-07-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.5033965

Due to the drastic aerodynamic heating effect in supersonic aircrafts, the operational performance of wave-transmitting dielectric ceramics functionalized radomes strongly depends on the temperature and oxidation. In this paper, the evolution of microwave dielectric responses in Si3N4 ceramics via gelcasting over a wide temperature range (25°C∼800°C) is investigated experimentally and theoretically. Specifically, the relative increment rate of real permittivity over evaluated temperature range is 4.46% at 8.2GHz and 8.67% at 12.4GHz, while the imaginary permittivity remains less than 0.06. Taking temperature-dependent polarized bound charge and damping coefficient into consideration, a revised dielectric relaxation model with Lorentz correction for Si3N4 ceramics has been established, which agrees well with evolution of experimental results. Furthermore, the best fitting results indicate that the activation energy of electrons Ea (15.46 ∼17.49 KJ/mol) is less than that of lattice Eb (33.29∼40.40 KJ/mol), which could be ascribed to the binding force between the electrons and nucleus is lower than covalent bonding force of lattice. Besides, excellent restorable feature of permittivity after heat-treatment lays a solid foundation for radome materials serviced in high temperature circumstances.