Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

• Main Authors: Tzu-Hsuan Chang, Kanglin Xiong, Sung Hyun Park, Ge Yuan, Zhenqiang Ma, Jung Han
• Format: Article
• Language: English
• Published: Nature Publishing Group 2017-07-01
• Series: Scientific Reports
• Online Access: https://doi.org/10.1038/s41598-017-06957-8

Abstract Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.