Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate

In this work, we report demonstration of optically-pumped single-mode deep-ultraviolet lasing actions operating at room temperature from ∼1-<italic>μ</italic>m 150-nm-thick undercut microdisks with AlN/Al<sub>0.35</sub>Ga <sub>0.65</s...

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Main Authors:	Yiyun Zhang, Hongjian Li, Panpan Li, Arash Dehzangi, Liancheng Wang, Xiaoyan Yi, Guohong Wang
Format:	Article
Language:	English
Published:	IEEE 2017-01-01
Series:	IEEE Photonics Journal
Subjects:	Microdisk cavities deep ultraviolet lasing whispering-gallery modes
Online Access:	https://ieeexplore.ieee.org/document/8038044/

id	doaj-79db44fea7914a228bca67a0cb45a5f6
record_format	Article
spelling	doaj-79db44fea7914a228bca67a0cb45a5f62021-03-29T17:43:31ZengIEEEIEEE Photonics Journal1943-06552017-01-01951810.1109/JPHOT.2017.27522078038044Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si SubstrateYiyun Zhang0Hongjian Li1Panpan Li2Arash Dehzangi3Liancheng Wang4Xiaoyan Yi5Guohong Wang6Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, USAMaterials Department, University of California, Santa Barbara, CA, United StatesSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaDepartment of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, USASemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaIn this work, we report demonstration of optically-pumped single-mode deep-ultraviolet lasing actions operating at room temperature from ∼1-<italic>μ</italic>m 150-nm-thick undercut microdisks with AlN/Al<sub>0.35</sub>Ga <sub>0.65</sub>N (5.5 nm/2.5 nm) multiple quantum wells. These AlGaN-based microdisks are grown on Si substrate by metal-organic chemical vapor deposition. The lasing wavelength centers at ∼300.1 nm with the linewidth of ∼1.0 nm as the excitation exceeds the lasing threshold of ∼24.2 mJ/cm<sup>2</sup>. An emission coupling factor (<italic>β</italic>) of 9.2 × 10<sup>−2</sup> is estimated based on the light output characteristics of the AlN/AlGaN microdisks with increasing the pumping densities. Concurrently, a 100 meV blue-shift in the mode energy has also been observed. The lasing spectral peak is attributed to fundamental-order transverse-electric whispering-gallery modes, confirmed by three-dimensional finite-difference time-domain simulations.https://ieeexplore.ieee.org/document/8038044/Microdisk cavitiesdeep ultraviolet lasingwhispering-gallery modes
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Yiyun Zhang Hongjian Li Panpan Li Arash Dehzangi Liancheng Wang Xiaoyan Yi Guohong Wang
spellingShingle	Yiyun Zhang Hongjian Li Panpan Li Arash Dehzangi Liancheng Wang Xiaoyan Yi Guohong Wang Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate IEEE Photonics Journal Microdisk cavities deep ultraviolet lasing whispering-gallery modes
author_facet	Yiyun Zhang Hongjian Li Panpan Li Arash Dehzangi Liancheng Wang Xiaoyan Yi Guohong Wang
author_sort	Yiyun Zhang
title	Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
title_short	Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
title_full	Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
title_fullStr	Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
title_full_unstemmed	Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
title_sort	optically-pumped single-mode deep-ultraviolet microdisk lasers with algan-based multiple quantum wells on si substrate
publisher	IEEE
series	IEEE Photonics Journal
issn	1943-0655
publishDate	2017-01-01
description	In this work, we report demonstration of optically-pumped single-mode deep-ultraviolet lasing actions operating at room temperature from ∼1-<italic>μ</italic>m 150-nm-thick undercut microdisks with AlN/Al<sub>0.35</sub>Ga <sub>0.65</sub>N (5.5 nm/2.5 nm) multiple quantum wells. These AlGaN-based microdisks are grown on Si substrate by metal-organic chemical vapor deposition. The lasing wavelength centers at ∼300.1 nm with the linewidth of ∼1.0 nm as the excitation exceeds the lasing threshold of ∼24.2 mJ/cm<sup>2</sup>. An emission coupling factor (<italic>β</italic>) of 9.2 × 10<sup>−2</sup> is estimated based on the light output characteristics of the AlN/AlGaN microdisks with increasing the pumping densities. Concurrently, a 100 meV blue-shift in the mode energy has also been observed. The lasing spectral peak is attributed to fundamental-order transverse-electric whispering-gallery modes, confirmed by three-dimensional finite-difference time-domain simulations.
topic	Microdisk cavities deep ultraviolet lasing whispering-gallery modes
url	https://ieeexplore.ieee.org/document/8038044/
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Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate

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