Low-temperature synthesis of silicon carbide powder using shungite

Low-temperature synthesis of silicon carbide powder using shungite

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600 °C. It is worth e...

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Main Authors: Agnieszka Gubernat, Waldemar Pichór, Radosław Lach, Dariusz Zientara, Maciej Sitarz, Maria Springwald
Format: Article
Language:English
Published: Elsevier 2017-01-01
Series:Boletín de la Sociedad Española de Cerámica y Vidrio
Subjects:
Silicon carbide
Abrasives powder
Shungite
Low-temperature synthesis
Online Access:http://www.sciencedirect.com/science/article/pii/S0366317516300346
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spelling doaj-79deea2edab443c1a9625053d7dc7da52020-11-24T20:50:05ZengElsevierBoletín de la Sociedad Española de Cerámica y Vidrio0366-31752017-01-01561394610.1016/j.bsecv.2016.04.003Low-temperature synthesis of silicon carbide powder using shungiteAgnieszka GubernatWaldemar PichórRadosław LachDariusz ZientaraMaciej SitarzMaria SpringwaldThe paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600 °C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500 °C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders.http://www.sciencedirect.com/science/article/pii/S0366317516300346Silicon carbideAbrasives powderShungiteLow-temperature synthesis
collection DOAJ
language English
format Article
sources DOAJ
author Agnieszka Gubernat
Waldemar Pichór
Radosław Lach
Dariusz Zientara
Maciej Sitarz
Maria Springwald
spellingShingle Agnieszka Gubernat
Waldemar Pichór
Radosław Lach
Dariusz Zientara
Maciej Sitarz
Maria Springwald
Low-temperature synthesis of silicon carbide powder using shungite
Boletín de la Sociedad Española de Cerámica y Vidrio
Silicon carbide
Abrasives powder
Shungite
Low-temperature synthesis
author_facet Agnieszka Gubernat
Waldemar Pichór
Radosław Lach
Dariusz Zientara
Maciej Sitarz
Maria Springwald
author_sort Agnieszka Gubernat
title Low-temperature synthesis of silicon carbide powder using shungite
title_short Low-temperature synthesis of silicon carbide powder using shungite
title_full Low-temperature synthesis of silicon carbide powder using shungite
title_fullStr Low-temperature synthesis of silicon carbide powder using shungite
title_full_unstemmed Low-temperature synthesis of silicon carbide powder using shungite
title_sort low-temperature synthesis of silicon carbide powder using shungite
publisher Elsevier
series Boletín de la Sociedad Española de Cerámica y Vidrio
issn 0366-3175
publishDate 2017-01-01
description The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600 °C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500 °C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders.
topic Silicon carbide
Abrasives powder
Shungite
Low-temperature synthesis
url http://www.sciencedirect.com/science/article/pii/S0366317516300346
work_keys_str_mv AT agnieszkagubernat lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
AT waldemarpichor lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
AT radosławlach lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
AT dariuszzientara lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
AT maciejsitarz lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
AT mariaspringwald lowtemperaturesynthesisofsiliconcarbidepowderusingshungite
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