Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and roo...

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Bibliographic Details
Main Authors: Bin Fang, Jiafeng Feng, Huadong Gan, Roger Malmhall, Yiming Huai, Rongxin Xiong, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, Zhongming Zeng
Format: Article
Language:English
Published: AIP Publishing LLC 2016-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4971229
Description
Summary:We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.
ISSN:2158-3226

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