| Summary: | SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density of converters significantly. However, the fast switching processes of SiC MOSFETs cause serious crosstalk problems in bridge-arm configurations, which restricts the devices’ performances. This paper presents a detailed and accurate improved crosstalk analytical model, which takes into account the nonlinear capacitances, the parasitic inductances, the reverse recovery characteristics of the anti-parallel diodes, and the nonlinear voltage switching and damping oscillation process. The novelty of the proposed model lies in the fact that under the condition of comprehensively considering all these non-ideal factors of the bridge-arm, the effects of multi-parasitic elements and multi-variables coupling to the crosstalk are hierarchically divided. The parasitic elements and their correlations are described in detail and the direct and indirect variables’ impacts are clearly traced. Thus, according to the different variables switching stages, the influence processes of these parasitic elements and variables can be integrated and a complete equivalent analytical model of the crosstalk process can be derived. The simulation and experiment platforms are established and a series of experimental verifications and comparisons prove that the model can replicate experimental measurements of crosstalk with good accuracy and detail.
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