Overview on GaN FET structure, driving and its application

To make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the pap...

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Main Authors:	Wu Wenjun, Lan Xuemei
Format:	Article
Language:	zho
Published:	National Computer System Engineering Research Institute of China 2020-01-01
Series:	Dianzi Jishu Yingyong
Subjects:	gan fet stucture principle driving product
Online Access:	http://www.chinaaet.com/article/3000112333

id	doaj-7b1029377c694fd0ab96994910045072
record_format	Article
spelling	doaj-7b1029377c694fd0ab969949100450722020-11-25T02:10:46ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982020-01-01461222910.16157/j.issn.0258-7998.1909613000112333Overview on GaN FET structure, driving and its applicationWu Wenjun0Lan Xuemei1School of Automation and Information Engineering，Xi′an University of Technology，Xi′an 710048，ChinaSchool of Automation and Information Engineering，Xi′an University of Technology，Xi′an 710048，ChinaTo make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the paper, firstly, the GaN FET structure and its products are introduced; Secondly, the isolated method is described, then the principles of the discrete driving circuit and the integrated driving circuit are presented; Finally, GaN FET′s application is summarized.http://www.chinaaet.com/article/3000112333gan fetstuctureprincipledrivingproduct
collection	DOAJ
language	zho
format	Article
sources	DOAJ
author	Wu Wenjun Lan Xuemei
spellingShingle	Wu Wenjun Lan Xuemei Overview on GaN FET structure, driving and its application Dianzi Jishu Yingyong gan fet stucture principle driving product
author_facet	Wu Wenjun Lan Xuemei
author_sort	Wu Wenjun
title	Overview on GaN FET structure, driving and its application
title_short	Overview on GaN FET structure, driving and its application
title_full	Overview on GaN FET structure, driving and its application
title_fullStr	Overview on GaN FET structure, driving and its application
title_full_unstemmed	Overview on GaN FET structure, driving and its application
title_sort	overview on gan fet structure, driving and its application
publisher	National Computer System Engineering Research Institute of China
series	Dianzi Jishu Yingyong
issn	0258-7998
publishDate	2020-01-01
description	To make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the paper, firstly, the GaN FET structure and its products are introduced; Secondly, the isolated method is described, then the principles of the discrete driving circuit and the integrated driving circuit are presented; Finally, GaN FET′s application is summarized.
topic	gan fet stucture principle driving product
url	http://www.chinaaet.com/article/3000112333
work_keys_str_mv	AT wuwenjun overviewonganfetstructuredrivinganditsapplication AT lanxuemei overviewonganfetstructuredrivinganditsapplication
_version_	1724917620754350080

Overview on GaN FET structure, driving and its application

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