Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO<sub>2</sub> back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current cu...

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Bibliographic Details
Main Authors: Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
SOI
interface traps
radiation
energy distribution
Online Access:https://ieeexplore.ieee.org/document/8801847/

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