Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3...
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IFSA Publishing, S.L.
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Online Access: | http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdf |
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doaj-7b68342c49014dd8a852f19ef66b65362020-11-25T00:27:22ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792016-10-01205106371Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis AccelerometerSujatha L.0Kalaiselvi S.1Vigneswaran N.2Centre for MEMS & Microfluidics, Rajalakshmi Engineering College, Chennai – 602105 India Centre for MEMS & Microfluidics, Rajalakshmi Engineering College, Chennai – 602105 India Faculty of Electrical and Electronics Engineering, University Malaysia Pahang, Pekan MalaysiaIn this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis.http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdfTri-Axis accelerometerSOIMUMPSHigh bandwidthVibration measurementResonant frequency. |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Sujatha L. Kalaiselvi S. Vigneswaran N. |
spellingShingle |
Sujatha L. Kalaiselvi S. Vigneswaran N. Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer Sensors & Transducers Tri-Axis accelerometer SOIMUMPS High bandwidth Vibration measurement Resonant frequency. |
author_facet |
Sujatha L. Kalaiselvi S. Vigneswaran N. |
author_sort |
Sujatha L. |
title |
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer |
title_short |
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer |
title_full |
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer |
title_fullStr |
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer |
title_full_unstemmed |
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer |
title_sort |
out-of-plane characterization of silicon-on-insulator multiuser mems processes-based tri-axis accelerometer |
publisher |
IFSA Publishing, S.L. |
series |
Sensors & Transducers |
issn |
2306-8515 1726-5479 |
publishDate |
2016-10-01 |
description |
In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis. |
topic |
Tri-Axis accelerometer SOIMUMPS High bandwidth Vibration measurement Resonant frequency. |
url |
http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdf |
work_keys_str_mv |
AT sujathal outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer AT kalaiselvis outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer AT vigneswarann outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer |
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1725340352125075456 |