Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer

In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3...

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Main Authors: Sujatha L., Kalaiselvi S., Vigneswaran N.
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2016-10-01
Series:Sensors & Transducers
Subjects:
Online Access:http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdf
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spelling doaj-7b68342c49014dd8a852f19ef66b65362020-11-25T00:27:22ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792016-10-01205106371Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis AccelerometerSujatha L.0Kalaiselvi S.1Vigneswaran N.2Centre for MEMS & Microfluidics, Rajalakshmi Engineering College, Chennai – 602105 India Centre for MEMS & Microfluidics, Rajalakshmi Engineering College, Chennai – 602105 India Faculty of Electrical and Electronics Engineering, University Malaysia Pahang, Pekan MalaysiaIn this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis.http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdfTri-Axis accelerometerSOIMUMPSHigh bandwidthVibration measurementResonant frequency.
collection DOAJ
language English
format Article
sources DOAJ
author Sujatha L.
Kalaiselvi S.
Vigneswaran N.
spellingShingle Sujatha L.
Kalaiselvi S.
Vigneswaran N.
Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
Sensors & Transducers
Tri-Axis accelerometer
SOIMUMPS
High bandwidth
Vibration measurement
Resonant frequency.
author_facet Sujatha L.
Kalaiselvi S.
Vigneswaran N.
author_sort Sujatha L.
title Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
title_short Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
title_full Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
title_fullStr Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
title_full_unstemmed Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer
title_sort out-of-plane characterization of silicon-on-insulator multiuser mems processes-based tri-axis accelerometer
publisher IFSA Publishing, S.L.
series Sensors & Transducers
issn 2306-8515
1726-5479
publishDate 2016-10-01
description In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis.
topic Tri-Axis accelerometer
SOIMUMPS
High bandwidth
Vibration measurement
Resonant frequency.
url http://www.sensorsportal.com/HTML/DIGEST/october_2016/Vol_205/P_RP_2016.pdf
work_keys_str_mv AT sujathal outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer
AT kalaiselvis outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer
AT vigneswarann outofplanecharacterizationofsilicononinsulatormultiusermemsprocessesbasedtriaxisaccelerometer
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