Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method
Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and metha...
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| Online Access: | https://www.mdpi.com/1996-1944/13/5/1173 |
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doaj-7bb9de2c08594906b39a5a7e661ea8bb2020-11-25T03:03:24ZengMDPI AGMaterials1996-19442020-03-01135117310.3390/ma13051173ma13051173Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition MethodL. G. Bulusheva0V. E. Arkhipov1K. M. Popov2V. I. Sysoev3A. A. Makarova4A. V. Okotrub5Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, RussiaNikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, RussiaNikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, RussiaNikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, RussiaPhysical Chemistry, Institute of Chemistry and Biochemistry, Free University of Berlin, 14195 Berlin, GermanyNikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, RussiaHeteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO<sub>2</sub>/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low <i>n</i>-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.https://www.mdpi.com/1996-1944/13/5/1173few-layer graphenedopingnitrogenphosphoruscvdelectronic structureresistivity |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
L. G. Bulusheva V. E. Arkhipov K. M. Popov V. I. Sysoev A. A. Makarova A. V. Okotrub |
| spellingShingle |
L. G. Bulusheva V. E. Arkhipov K. M. Popov V. I. Sysoev A. A. Makarova A. V. Okotrub Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method Materials few-layer graphene doping nitrogen phosphorus cvd electronic structure resistivity |
| author_facet |
L. G. Bulusheva V. E. Arkhipov K. M. Popov V. I. Sysoev A. A. Makarova A. V. Okotrub |
| author_sort |
L. G. Bulusheva |
| title |
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method |
| title_short |
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method |
| title_full |
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method |
| title_fullStr |
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method |
| title_full_unstemmed |
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method |
| title_sort |
electronic structure of nitrogen- and phosphorus-doped graphenes grown by chemical vapor deposition method |
| publisher |
MDPI AG |
| series |
Materials |
| issn |
1996-1944 |
| publishDate |
2020-03-01 |
| description |
Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO<sub>2</sub>/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low <i>n</i>-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data. |
| topic |
few-layer graphene doping nitrogen phosphorus cvd electronic structure resistivity |
| url |
https://www.mdpi.com/1996-1944/13/5/1173 |
| work_keys_str_mv |
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1724685858382020608 |