Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and metha...

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Bibliographic Details
Main Authors: L. G. Bulusheva, V. E. Arkhipov, K. M. Popov, V. I. Sysoev, A. A. Makarova, A. V. Okotrub
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Materials
Subjects:
few-layer graphene
doping
nitrogen
phosphorus
cvd
electronic structure
resistivity
Online Access:https://www.mdpi.com/1996-1944/13/5/1173

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