Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate l...

Full description

Bibliographic Details
Main Authors:	Sergio Colangeli, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Julien Poulain, Rémy Leblanc, Ernesto Limiti
Format:	Article
Language:	English
Published:	MDPI AG 2021-01-01
Series:	Electronics
Subjects:	gallium nitride on silicon HEMT characterization modeling scalable SSEC noise temperatures
Online Access:	https://www.mdpi.com/2079-9292/10/2/134

Similar Items

Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models
by: Lorenzo Pace, et al.
Published: (2020-01-01)

Source/Load-Pull Noise Measurements at K<sub>a</sub> Band
by: Sergio Colangeli, et al.
Published: (2021-09-01)

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing
by: Ronald A. Coutu, et al.
Published: (2016-06-01)

DESIGN AND SIMULATION OF DRIFT-DIFFUSION AND HYDRODYNAMIC MODELS FOR AlGaN/GaN HEMTs
by: Sunil Kumar, et al.
Published: (2016-01-01)

A Novel Current-Source-Based Gate Driver With Active Voltage Balancing Control for Series-Connected GaN HEMTs
by: Zhengda Zhang, et al.
Published: (2021-01-01)

A Closed-Loop Current Source Gate Driver With Active Gate Current Control for Dynamic Voltage Balancing in Series-Connected GaN HEMTs
by: Zhengda Zhang, et al.
Published: (2021-01-01)

Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods
by: Choi, Sukwon
Published: (2013)

Advanced processing for scaled depletion and enhancement-mode AlGaN/GaN HEMTs
by: Schuette, Michael L.
Published: (2010)

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications
by: Wei-Chih Cheng, et al.
Published: (2020-01-01)

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
by: Fabrizio Roccaforte, et al.
Published: (2019-05-01)

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE
by: Utkarsh Jadli, et al.
Published: (2021-01-01)

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air
by: Saleh Kargarrazi, et al.
Published: (2019-01-01)

Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors
by: Mrvić Jovan, et al.
Published: (2020-01-01)

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
by: Wei Lin, et al.
Published: (2021-04-01)

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
by: Tuan-Anh Vuong, et al.
Published: (2021-05-01)

Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme
by: Chao-Tsung Ma, et al.
Published: (2021-04-01)

Electro-thermo-mechanical characterization of stress development in AlGaN/GaN HEMTs under RF operating conditions
by: Jones, Jason Patrick
Published: (2015)

Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications
by: Enrique Maset, et al.
Published: (2020-12-01)

Efficient Modeling of Barrier Resistance for an Improved Lumped Element Model of GaN-Based MIS-HEMT Gate Stack
by: Narendra Rai, et al.
Published: (2020-01-01)

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
by: Mohammad Abdul Alim, et al.
Published: (2021-05-01)

Thermal modeling of GaN HEMTs on sapphire and diamond
by: Salm, Roman Peter.
Published: (2012)

Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs
by: Furkan Karakaya, et al.
Published: (2021-05-01)

Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation
by: Saugnon, Damien
Published: (2018)

Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN
by: Spisser, Hélène
Published: (2017)

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al<sub>0.17</sub>Ga<sub>0.83</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N Barrier Layers Design
by: Hsien-Chin Chiu, et al.
Published: (2018-01-01)

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations
by: Nandha Kumar Subramani, et al.
Published: (2017-01-01)

Trapping and Reliability investigations in GaN-based HEMTs
by: Benvegnù, Agostino
Published: (2016)

Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application
by: Ya-Chun Chang, et al.
Published: (2021-04-01)

Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN
by: Spisser, Hélène
Published: (2017)

Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs
by: Roberto Quaglia
Published: (2021-01-01)

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test
by: Wei Wang, et al.
Published: (2021-05-01)

Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
by: Mohan, Nagaboopathy
Published: (2017)

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
by: Matteo Meneghini, et al.
Published: (2017-01-01)

Impact of Gamma Radiation on Dynamic R<sub>DSON</sub> Characteristics in AlGaN/GaN Power HEMTs
by: Pedro J. Martínez, et al.
Published: (2019-08-01)

Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion
by: Héctor Sarnago, et al.
Published: (2021-04-01)

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
by: Erdin Ture, et al.
Published: (2016-01-01)

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
by: Alaleh Tajalli, et al.
Published: (2020-01-01)

Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications
by: Surya Elangovan, et al.
Published: (2020-05-01)

Can Asymmetry Quench Self-Heating in MOS High Electron Mobility Transistors?
by: ISLAM, MD SHAHRUL
Published: (2020)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
by: Che Abdullah, C.A, et al.
Published: (2019)