Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors

Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS<sub>2</sub> field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different...

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Main Authors: Xinnan Huang, Yao Yao, Songang Peng, Dayong Zhang, Jingyuan Shi, Zhi Jin
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Materials
Subjects:
transition metal dichalcogenides (TMDCs)
MoS2 FET
hysteresis
subthreshold swing
interface states
Online Access:https://www.mdpi.com/1996-1944/13/13/2896
id doaj-7e0f1f7abef84fb7916227b53011c8dc
record_format Article
spelling doaj-7e0f1f7abef84fb7916227b53011c8dc2020-11-25T03:11:12ZengMDPI AGMaterials1996-19442020-06-01132896289610.3390/ma13132896Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect TransistorsXinnan Huang0Yao Yao1Songang Peng2Dayong Zhang3Jingyuan Shi4Zhi Jin5High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThe stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS<sub>2</sub> field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS<sub>2</sub> FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS<sub>2</sub>–SiO<sub>2</sub> interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS<sub>2</sub> FET that is applied in the low power consumption devices and circuits.https://www.mdpi.com/1996-1944/13/13/2896transition metal dichalcogenides (TMDCs)MoS2 FEThysteresissubthreshold swinginterface states
collection DOAJ
language English
format Article
sources DOAJ
author Xinnan Huang
Yao Yao
Songang Peng
Dayong Zhang
Jingyuan Shi
Zhi Jin
spellingShingle Xinnan Huang
Yao Yao
Songang Peng
Dayong Zhang
Jingyuan Shi
Zhi Jin
Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
Materials
transition metal dichalcogenides (TMDCs)
MoS2 FET
hysteresis
subthreshold swing
interface states
author_facet Xinnan Huang
Yao Yao
Songang Peng
Dayong Zhang
Jingyuan Shi
Zhi Jin
author_sort Xinnan Huang
title Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
title_short Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
title_full Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
title_fullStr Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
title_full_unstemmed Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
title_sort effects of charge trapping at the mos<sub>2</sub>–sio<sub>2</sub> interface on the stability of subthreshold swing of mos<sub>2</sub> field effect transistors
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2020-06-01
description The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS<sub>2</sub> field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS<sub>2</sub> FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS<sub>2</sub>–SiO<sub>2</sub> interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS<sub>2</sub> FET that is applied in the low power consumption devices and circuits.
topic transition metal dichalcogenides (TMDCs)
MoS2 FET
hysteresis
subthreshold swing
interface states
url https://www.mdpi.com/1996-1944/13/13/2896
work_keys_str_mv AT xinnanhuang effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
AT yaoyao effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
AT songangpeng effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
AT dayongzhang effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
AT jingyuanshi effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
AT zhijin effectsofchargetrappingatthemossub2subsiosub2subinterfaceonthestabilityofsubthresholdswingofmossub2subfieldeffecttransistors
_version_ 1724655486065704960

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