Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS<sub>2</sub> field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different...
Main Authors: | Xinnan Huang, Yao Yao, Songang Peng, Dayong Zhang, Jingyuan Shi, Zhi Jin |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-06-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/13/2896 |
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