Organic (TPyP)Eu2[Pc(OPh)8]2/CdS self-assembled hybrid nano-transistors with high ambipolar performance

A new organic/inorganic hybrid bicomponent nanomaterial was obtained by quasi-Langmuir-Shafer (QLS) method with a mixed (phthalocyaninato)-(porphyrinato) europium complex (TPyP)Eu2[Pc(OPh)8]2 and the inorganic material CdS. The conductivity of the (TPyP)Eu2[Pc(OPh)8]2/CdS hybrid film (1.9 × 10−7 S c...

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Bibliographic Details
Main Authors: Xia Zhang, Lihong Liu, Jiaqi Xiao, Zhou Sun, Ping Li
Format: Article
Language:English
Published: Elsevier 2020-11-01
Series:Journal of Materials Research and Technology
Subjects:
CdS
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785420318214
Description
Summary:A new organic/inorganic hybrid bicomponent nanomaterial was obtained by quasi-Langmuir-Shafer (QLS) method with a mixed (phthalocyaninato)-(porphyrinato) europium complex (TPyP)Eu2[Pc(OPh)8]2 and the inorganic material CdS. The conductivity of the (TPyP)Eu2[Pc(OPh)8]2/CdS hybrid film (1.9 × 10−7 S cm−1) was greatly improved compared to the (TPyP)Eu2[Pc(OPh)8]2 film (6 × 10−10 S cm−1). In good contrast, the (TPyP)Eu2[Pc(OPh)8]2/CdS bicomponent thin film transistor devices constructed by QLS method revealed excellent ambipolar performance, much larger hole mobility (0.09 cm2 V−1 s−1; on/off ratio of 104) and electron mobility (0.01 cm2 V−1 s−1; on/off ratio of 103) when compared with single-component (TPyP)Eu2[Pc(OPh)8] film that showed 6.9 × 10−7  cm2 V−1 s−1 hole mobility (on/off ratio of 102) and 3.07 × 10−5 cm2 V−1 s−1 electron mobility (on/off ratio of 102). In addition, SEM and AFM results also showed that the bicomponent film had a uniform particle size distribution and a dense film structure. These properties could reduce the obstacles and carrier traps in the film and stabilize its electrical properties, which could greatly facilitate the transport of electrons and holes. The research work opens a new way for the preparation of stable, high-performance ambipolar OTFT devices in the air through molecular design and device assembly technology.
ISSN:2238-7854