Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots
Inhomogeneous Quantum Dot (IQD) semiconductor represents a newest trend in condensed matter, due to their important quantum levels and the outstanding properties. In this work, the impurity position effect on the diamagnetic susceptibility of a shallow magneto-donor, confined to move in (IQD) made o...
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doaj-7ee2efe1cdb54abcb126ba3665fd95282021-08-05T13:53:07ZengEDP SciencesMATEC Web of Conferences2261-236X2020-01-013300102210.1051/matecconf/202033001022matecconf_icome2019_01022Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dotsJanati Edrissi Sanae0Mmadi AliZorkani Izeddine1Rahmani Khalid2Jorio Anouar3El Ganaoui Mohamed4University Sidi Mohamed Ben Abdellah, Laboratory of Solid State Physics, Faculty of Sciences Dhar El Mahraz, Group of Nanomaterial and Renewable EnergiesUniversity Sidi Mohamed Ben Abdellah, Laboratory of Solid State Physics, Faculty of Sciences Dhar El Mahraz, Group of Nanomaterial and Renewable EnergiesLIRST, Faculty Polydisciplinary, Béni MellalUniversity Sidi Mohamed Ben Abdellah, Laboratory of Solid State Physics, Faculty of Sciences Dhar El Mahraz, Group of Nanomaterial and Renewable EnergiesLERMAB, IUT de Longwy, University of Lorraine 186Inhomogeneous Quantum Dot (IQD) semiconductor represents a newest trend in condensed matter, due to their important quantum levels and the outstanding properties. In this work, the impurity position effect on the diamagnetic susceptibility of a shallow magneto-donor, confined to move in (IQD) made out of Ga1-xAlxAs / GaAs/ Ga1-xAlxAs is reported theoretically. With the increase of the magnetic field, the diamagnetic susceptibility increases. The results using variational method reveal that diamagnetic susceptibility depends on many parameters including the impurity position, the external magnetic field and the nanostructure size. The magnetic field effect is more pronounced when the donor is placed near the extremities of the spherical layer (off-center). In addition, a maximum of diamagnetic susceptibility is observed, corresponding to a critical position value, for strong confinement regime and when the impurity is located in the spherical layer center.https://www.matec-conferences.org/articles/matecconf/pdf/2020/26/matecconf_icome2019_01022.pdf |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Janati Edrissi Sanae Mmadi Ali Zorkani Izeddine Rahmani Khalid Jorio Anouar El Ganaoui Mohamed |
spellingShingle |
Janati Edrissi Sanae Mmadi Ali Zorkani Izeddine Rahmani Khalid Jorio Anouar El Ganaoui Mohamed Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots MATEC Web of Conferences |
author_facet |
Janati Edrissi Sanae Mmadi Ali Zorkani Izeddine Rahmani Khalid Jorio Anouar El Ganaoui Mohamed |
author_sort |
Janati Edrissi Sanae |
title |
Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots |
title_short |
Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots |
title_full |
Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots |
title_fullStr |
Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots |
title_full_unstemmed |
Impurity position effect on the diamagnetic susceptibility of a magneto-donor in GaAs inhomogeneous quantum dots |
title_sort |
impurity position effect on the diamagnetic susceptibility of a magneto-donor in gaas inhomogeneous quantum dots |
publisher |
EDP Sciences |
series |
MATEC Web of Conferences |
issn |
2261-236X |
publishDate |
2020-01-01 |
description |
Inhomogeneous Quantum Dot (IQD) semiconductor represents a newest trend in condensed matter, due to their important quantum levels and the outstanding properties. In this work, the impurity position effect on the diamagnetic susceptibility of a shallow magneto-donor, confined to move in (IQD) made out of Ga1-xAlxAs / GaAs/ Ga1-xAlxAs is reported theoretically. With the increase of the magnetic field, the diamagnetic susceptibility increases. The results using variational method reveal that diamagnetic susceptibility depends on many parameters including the impurity position, the external magnetic field and the nanostructure size. The magnetic field effect is more pronounced when the donor is placed near the extremities of the spherical layer (off-center). In addition, a maximum of diamagnetic susceptibility is observed, corresponding to a critical position value, for strong confinement regime and when the impurity is located in the spherical layer center. |
url |
https://www.matec-conferences.org/articles/matecconf/pdf/2020/26/matecconf_icome2019_01022.pdf |
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